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WebRBN25H125S1FPQ-A0#CB0 Renesas Electronics IGBT Transistors IGBT-G8H 1250V/25A built-in FRD TO247A datasheet, inventory & pricing. Skip to Main Content +60 4 2991302 WebRBN25H125S1FPQ-A0 R07DS1378EJ0132 Rev.1.32 Page 3 of 11 Jun 19, 2024 Electrical Characteristics (Tc = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter leakage current ICES 200 A VCE = 1250 V, VGE = 0 V Gate to emitter leakage current IGES ±1 A VGE = ±30 V, VCE = 0 V first step behavioral health pompano beach

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